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LE25S40MB
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
DC voltage (all pins)
Storage temperature
Symbol
VDDmax
VIN/VOUT
Tstg
With respect to VSS
With respect to VSS
Conditions
Ratings
-0.5 to +2.4
-0.5 to VDD+0.5
-55 to +150
unit
V
V
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Operating Conditions
Parameter
Operating supply voltage
Operating ambient temperature
Symbol
VDD
Topr
Conditions
Ratings
1.65 to 1.95
-40 to +85
unit
V
° C
Allowable DC Operating Conditions
Parameter
Read mode operating current
Symbol
ICCR
Conditions
SCK=0.1VDD/0.9VDD,
HOLD=WP=0.9VDD,
min
Ratings
typ
max
6
unit
mA
SO=open,25MHz
SCK=0.1VDD/0.9VDD,
HOLD=WP=0.9VDD,
SO=open,40MHz
8
mA
Write mode operating current
(erase+page program)
CMOS standby current
Power-down standby current
Input leakage current
Output leakage current
Input low voltage
Input high voltage
Output low voltage
ICCW
ISB
IDSB
ILI
ILO
VIL
VIH
VOL
tSSE= tSE= tCHE=typ.,tPP=max
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
CS=VDD, HOLD=WP=VDD,
SI=VSS/VDD, SO=open,
IOL=100 μ A, VDD=VDD min
IOL=1.6mA, VDD=VDD min
-0.3
0.7VDD
15
50
10
2
2
0.3VDD
VDD+0.3
0.2
0.4
mA
μ A
μ A
μ A
μ A
V
V
V
Output high voltage
VOH
IOH=-100 μ A, VDD=VDD min
VCC-0.2
V
Data hold, Rewriting frequency
Rewriting frequency
Data hold
Parameter
condition
Program/Erase
Status resister write
min
100,000
1,000
20
max
unit
times/
Sector
year
Pin Capacitance at Ta=25 ° C, f=1MHz
Parameter
Symbol
Conditions
Ratings
unit
max
Output pin capacitance
Input pin Capacitance
CSO
CIN
VSO=0V
VIN=0V
12
6
pF
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values
for some of the sampled devices.
No.A2096-16/22
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